All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Buffer Transport Mechanisms in Intentionally Carbon Doped GaN Heterojunction Field Effect Transistors

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage cap...

متن کامل

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

متن کامل

All-electric all-semiconductor spin field-effect transistors.

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to...

متن کامل

Charge trapping on defects in AlGaN/GaN field effect transistors

The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the char...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Power Electronics

سال: 2017

ISSN: 0885-8993,1941-0107

DOI: 10.1109/tpel.2016.2643499